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"Minority carrier lifetime degradation in boron-doped Czochralski silicon." Journal of Applied Physics, 90(5):2397, 2001. "P-type versus n-type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells." IEEE Transactions on Electron Devices, 53(8):1893-1901, 2006. A New Silicon p-n Junction Photocell for Converting Solar Radiation into Electrical Power. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.ĭ. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency.
#Pc1d silicon one junction software#
The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D.
In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. N-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently.
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